Bipolar Junction Transistors

ثبت نشده
چکیده

Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurement u Collector leakage current measurement u Automatic recognition of semiconductor type for bipolar transistors (Ge/Si) u Detection of Collector/Emitter diode and Base-Emitter shunt resistor u Gate threshold voltage for MOSFETs u Test current measurement u Gate threshold, IDSS and RDSON for JFETs u Diode forward voltage and forward current measurements u Diode leakage current measurement u Low power Darlington recognition with pinout identification u Low power Triac and thyristor identification u Unijunction transistor identification with pinout and RBB/η measurement u Internal short circuit detection and resistance measurement

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Investigating the changes of electrical characteristics of Bipolar Junction Transistors, before and after gamma irradiation

Bipolar junction transistors (BJTs) are active semiconductor devices commonly used for amplification and switching applications. In this study, transistors have been biased to operate in active region and by measuring the electrical characteristics of BJTs, the effect of gamma irradiation on each of these characteristics was investigated before and after the gamma irradiation by 60Co source. In...

متن کامل

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

Silicon Carbide Bipolar Junction Transistors for High Temperature Sensing Applications

متن کامل

A New Lateral PNM Schottky Collector Bipolar Transistor (SCBT) on SOI for Nonsaturating VLSI Logic Design

The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors o...

متن کامل

The comparison of radiation hardness of heterojunction SiGe and conventional silicon bipolar transistors

The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistor...

متن کامل

Polyphosphonium-based ion bipolar junction transistors.

Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that ca...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004